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Same model may have multiple batches, images only for reference.
SSM3J331R,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J331R,LF

Part No SSM3J331R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P CH 20V 4A SOT-23F
Datasheet
SSM3J331R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 55 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs 10.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 630pF @ 10V
Power - Max 1W
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package SOT-23-3 Flat Leads
Manufacturer Device Package SOT-23F
Win Source Part Number 109276-SSM3J331R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J331R,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J331R,LF is a P-channel MOSFET transistor with a drain to source voltage of 20V and a continuous drain current of 4A @ 25°C.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum On-Resistance: 55mOhm @ 3A and 4.5V
  • Gate Threshold Voltage: 1V @ 1mA
  • Gate Type: Logic Level Gate
  • Drive Voltage: 1.5V
  • Input Capacitance: 630pF @ 10V
  • Gate Charge: 10.4nC @ 4.5V
  • Package: SOT-23-3 flat leads
  • Mounting: Surface Mountable
  • Power Rating: 1W
  • Temperature Range: 150°C

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