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SSM3J02T

Part No SSM3J02T
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192857-SSM3J02T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J02T CAD Model

Description

The SSM3J02T is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for switching applications with low on-resistance. The 'T' suffix usually indicates a specific package or taping option. It is designed for efficient power management in various electronic devices.

Applications

  • Load Switching: Used to control power supply to different circuit components.
  • DC-DC Converters: Employed in voltage regulation circuits.
  • Power Management in Portable Devices: Ideal for battery-powered devices and other portable electronics.
  • Analog Signal Switching: Can be used for switching analog signals.

Features

  • P-Channel MOSFET: Designed for high-side switching using a negative gate voltage.
  • Low On-Resistance (RDS(ON)): Minimizes power loss during switching, increasing efficiency.
  • Fast Switching Speed: Supports rapid switching operations, suitable for high-frequency applications.
  • Compact Package: Comes in a small surface-mount package, saving valuable PCB space.
  • RoHS Compliant: Complies with the Restriction of Hazardous Substances directive.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation and heat generation.
  • Space-Saving Design: Compact package enables denser circuit layouts.
  • Reliable Performance: Manufactured by Toshiba to ensure consistent and dependable operation.
  • Simplified High-Side Switching: P-channel configuration simplifies circuit design for high-side switching.
  • Environmentally Friendly: RoHS compliance ensures minimal environmental impact.

Specifications

The SSM3J02T features a drain-source voltage (VDS) rating suitable for low to medium voltage applications. The gate-source voltage (VGS) is specified to ensure proper operation without damage. The drain current (ID) indicates the maximum current it can handle. The on-resistance (RDS(ON)) is a critical parameter, impacting power loss and efficiency. Refer to the datasheet for precise voltage, current, and resistance values under different operating conditions.

It is typically available in a surface-mount package such as SOT-23 or similar, facilitating automated assembly. The operating temperature range allows for use in various environmental conditions. The gate charge (Qg) influences switching speed, with lower values indicating faster switching. The 'T' suffix often denotes a specific tape and reel configuration or other packaging variations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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