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SF3G41

Part No SF3G41
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 972288-SF3G41
Categories OEM Parts( S )
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SF3G41 CAD Model

Description

The SF3G41 is a Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. Schottky diodes are characterized by their fast switching speeds and low forward voltage drop, making them suitable for applications requiring efficient rectification and high-frequency operation.

Applications

  • Switch-mode power supplies (SMPS)
  • High-frequency inverters
  • DC-DC converters
  • Free-wheeling diodes
  • Reverse polarity protection

Features

  • Low forward voltage drop: Minimizes power loss and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • High surge current capability: Withstands transient current spikes.
  • Compact surface mount package: Facilitates automated assembly and miniaturization.
  • RoHS compliant: Environmentally friendly and compliant with regulations.

Benefits

  • Increased efficiency: Reduced power loss due to low forward voltage drop.
  • Improved performance in high-frequency applications: Fast switching speed minimizes switching losses.
  • Enhanced system reliability: High surge current capability protects against transient events.
  • Smaller and more compact designs: Surface mount package allows for miniaturization.
  • Environmentally friendly: RoHS compliance ensures compliance with environmental regulations.

The SF3G41 operates by allowing current to flow easily in one direction while blocking current flow in the opposite direction. Its Schottky barrier construction results in a lower forward voltage drop compared to conventional diodes, meaning less power is wasted as heat when the diode is conducting. The fast switching speed is essential for high-frequency applications, such as switch-mode power supplies, where the diode must rapidly turn on and off to maintain efficiency.

Technical Specifications: Consult the Toshiba Semiconductor and Storage datasheet for specifics. Key parameters include the maximum repetitive peak reverse voltage (VRRM), the average forward current (IF(AV)), and the forward voltage (VF) at a specified current. Other key specifics include the reverse leakage current (IR) and the operating temperature range.

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