The Toshiba RN1313(TE85L,F) is an active electronic component with a USM case/package.

• It has a: maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.
• The maximum power dissipation is: 150mW.
• The supply and demand status is: balanced.
• This electronic component is manufactured by: Toshiba Semiconductor and Storage and has a Win Source Part Number of 114051-RN1313(TE85L,F).
• It has a packaging of: reel-TR and mounting of SMD (SMT).
• The frequency-transition is: 250MHz and the transistor polarity is NPN - Pre-Biased.
• The resistor - base (R1) (Ohms) is: 47k and the resistor - emitter base (R2) (Ohms) is not available.
• The collector cut-off current (Max) is: 100nA (ICBO) and the typical gain (hFE) (Min) is 120 @ 1mA, 5V.
• The max Vce (sat) is: 300mV @ 250μA, 5mA.