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HN2V02H-B

Part No HN2V02H-B
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1063296-HN2V02H-B
Categories OEM Parts(F-I)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian HN2V02H-B CAD Model

Description

The HN2V02H-B is a P-channel MOS field-effect transistor from Toshiba Semiconductor and Storage. This transistor is designed for high-speed switching and power management applications.

Applications

  • DC-DC converters
  • Load switches
  • Power management circuits in portable devices
  • Motor control circuits
  • General-purpose switching applications

Features

  • P-Channel MOSFET: Suitable for applications where a low-side switch is required.
  • Low On-Resistance: Minimizes power loss and improves efficiency.
  • High-Speed Switching: Enables faster operation in switching circuits.
  • Surface Mount Package: Allows for efficient PCB assembly and compact designs.
  • Excellent Noise Immunity: Enhances stability and reduces unwanted switching.
  • Avalanche Energy Support: Provides additional protection against voltage spikes.

Benefits

  • Improved Efficiency: Low on-resistance leads to reduced power dissipation.
  • Compact Design: Surface mount package allows for smaller and lighter designs.
  • Enhanced Reliability: Rugged construction ensures reliable performance in demanding conditions.
  • Simplified Circuit Design: Easy to integrate into various electronic circuits.
  • Extended Battery Life: Optimized for power management applications in portable devices.

Additional Details

The HN2V02H-B features a low gate charge, which contributes to its high-speed switching capabilities. Its compact surface-mount package facilitates efficient PCB assembly and space utilization. The device's robust design ensures reliable performance across a wide range of operating conditions. It's commonly found in DC-DC converters and power management circuits, providing efficient power conversion and regulation.

Technical Specifications (General):

  • Channel Type: P-Channel
  • Package Type: Surface Mount
  • Maximum Drain-Source Voltage: Typically around -20V to -30V (consult datasheet for precise value)
  • Maximum Continuous Drain Current: Typically around -1A to -3A (consult datasheet for precise value)
  • On-Resistance (RDS(on)): Low RDS(on) value for minimal power loss.
  • Gate Threshold Voltage: Consult datasheet for precise value.

Note: Always refer to the manufacturer's datasheet for the most accurate and up-to-date technical specifications and application guidelines.

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