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Same model may have multiple batches, images only for reference.
GT60N321(Q)
Same model may have multiple batches, images only for reference.

GT60N321(Q)

Part No GT60N321(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 1000V 60A 170W TO3P LH
Datasheet
GT60N321(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 60A
Maximum Power Dissipation 170W
Input Type Standard
Turn-on and Turn-off delay time 330ns/700ns
Reverse Recovery Time (trr) 2.5μs
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(LH)
Win Source Part Number 067742-GT60N321(Q)
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian GT60N321(Q) CAD Model

Description

This electronic component manufactured by Toshiba Semiconductor and Storage is a Discrete Semiconductor Product that is now obsolete (EOL).

  • Application: Power management
  • Maximum Current Collector: 60A
  • Supply and Demand: Balanced

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