The 3SK195(TE85L is a VHF/UHF band amplifier field effect transistor (FET) manufactured by Toshiba Semiconductor and Storage. It is designed for low-noise amplification in various communication and broadcast receiver applications. This FET offers excellent gain and low noise figure, making it suitable for sensitive front-end circuits.

Applications:

• VHF/UHF low noise amplifiers
• FM and TV receivers
• Communication equipment front-end
• Spectrum analyzers
• Oscillators

Features:

• High gain
• Low noise figure
• High power gain: Gps = 19dB typ. (f = 200MHz)
• Low noise: NF = 1.2dB typ. (f = 200MHz)
• High cutoff frequency
• Small package size

Benefits:

• Improved receiver sensitivity
• Enhanced signal-to-noise ratio
• Compact circuit design
• Stable performance across a wide frequency range
• High reliability

Additional Details:

The 3SK195(TE85L features a dual-gate structure, which allows for improved gain control and reduced feedback capacitance. This results in more stable and predictable performance in high-frequency applications. The transistor is typically biased with a low drain voltage and current to minimize noise and maximize gain. Its small package allows for compact circuit layouts, which is essential in modern communication devices.

Technical Specifications:

• Polarity: N-Channel
• Package: SOT-23 (or equivalent)
• Maximum Drain-Source Voltage (VDS): Typically around 20V
• Maximum Gate-Source Voltage (VGS): Typically around -8V
• Drain Current (ID): Typically around 20mA
• Power Dissipation: Typically around 200mW
• Operating Temperature Range: -55°C to +150°C