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2SK3320-BL

Part No 2SK3320-BL
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description JFET DUAL N-CH USV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Current - Drain (Idss) @ Vds (Vgs=0) 6mA @ 10V
Voltage - Cutoff (VGS off) @ Id 200mV @ 100nA
Max Input Capacitance 13pF @ 10V
Maximum Power Dissipation 200mW
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Win Source Part Number 133884-2SK3320-BL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK3320-BL CAD Model

Description

The 2SK3320-BL stands out as an excellent N-channel MOSFET, perfectly crafted for diverse applications. Its unique BL sorting ensures high-standard quality tailored to meet stringent industrial specifications, promising durability and unmatched efficiency.

Features and Benefits

  • High electron mobility: Ensures efficiency and speed in charge transfer.
  • Optimized gate design: Minimizes energy dissipation and enhances overall device efficacy.
  • Dynamic response capabilities: Adapts to variable loads without performance droppage.
  • Eco-efficient performance: Reduces energy consumption and thermal punctuation.

Applications

  • Advanced communication systems
  • Energy-efficient computing systems
  • Industrial automation
  • Renewable energy setups

With its high-quality structure and outstanding features, the 2SK3320-BL reinforces value in critical electrical engineering applications, pushing the boundaries of what’s possible through innovative technology and reliability.

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