The 2SK2796STR-E is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-speed switching applications and is commonly used in power supplies and DC-DC converters.

Applications

• Switching regulators
• DC-DC converters
• Motor drivers
• Power supplies
• Load switching

Features

• Low on-resistance (RDS(on))
• High-speed switching
• Low gate charge
• Avalanche rated
• Surface mount package

Benefits

• Provides efficient power switching, minimizing power loss and improving energy efficiency.
• Enables fast switching speeds, reducing switching losses and improving circuit performance.
• Reduces gate drive requirements, simplifying circuit design and reducing component count.
• Offers robust performance under transient voltage conditions, improving reliability.
• Facilitates automated assembly and reduces board space requirements.

Additional Details

The 2SK2796STR-E has a drain-source voltage (VDS) rating, a continuous drain current (ID) rating, and an on-resistance (RDS(on)) specification that are outlined in the Toshiba datasheet. The gate threshold voltage (VGS(th)) is another important parameter for circuit design. It is available in a surface mount package such as a SOT-89 or similar. This MOSFET is designed to operate within a specified temperature range, and the datasheet provides detailed information on thermal resistance and safe operating area.