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2SK2162

Part No 2SK2162
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) / Trans MOSFET N-CH Si 180V 1A
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159346-2SK2162
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK2162
Introduction Date January 12, 1998
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2162 CAD Model

Description

Product Overview

Designed for high-efficiency power conversion and low energy loss, the 2SK2162 is a cutting-edge N-channel MOSFET offering excellent performance for a multitude of electronic applications. Its robust features cater to industries that demand high reliability and efficiency.

Features and Benefits

  • Exceptional Power Efficiency: Reduces electrical losses, ensuring more power is effectively delivered.
  • Rapid Turn-on/off Times: Enables quick transitions, crucial for high-speed operations.
  • High Thermal Conductivity: Efficient heat dissipation allows operation under high power conditions without compromising stability.
  • Diverse Applicability: Versatile enough for integration into various types of systems.

Applications

  • Consumer Electronics
  • Battery Management Systems
  • Smart Grid Applications
  • Energy Harvesting Systems

Additional Details

The 2SK2162 features low gate-charge and drain-source on-resistance, vital for minimizing power wastage and thermal build-up in prolonged use scenarios. It is engineered to meet the evolving demands of new-age electronics, assuring high performance in both standard and harsh environments. This MOSFET is an integral part of solutions looking to leverage cutting-edge technology for enhanced operational efficiency.

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