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2SJ115

Part No 2SJ115
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH Si 160V 8A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 158392-2SJ115
Popularity Low
Supply and Demand Status Limited
Family Name 2SJ115
Introduction Date April 09, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SJ115 CAD Model

Description

The 2SJ115 is a P-channel MOSFET designed for robustness and efficiency in a variety of electronic circuits. Its superior performance in switching and amplification tasks makes it highly sought in several industrial and consumer electronics.

Applications

  • DC-DC converters
  • Power management circuits
  • Industrial automation
  • Consumer electronics

Features and Benefits

  • Efficient power handling: Facilitates effective power management and conversion with minimal loss.
  • Low gate charge: Enhances efficiency by reducing the power required to drive the MOSFET.
  • Durable construction: Ensures device longevity, making it suitable for long-term deployments.
  • Comprehensive thermal management: Maintains optimal performance in fluctuating thermal conditions.

The 2SJ115's design focuses on minimizing energy losses during switching and conduction, yielding increased efficiency and reduced thermal build-up. This makes it particularly effective for high-performance power management solutions.

Its ability to function in diverse environments makes it a valuable addition to any project requiring reliable field-effect transistors. Engineers and designers appreciate the 2SJ115 for its consistent, dependable operation and its ability to integrate seamlessly into new or existing systems.

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