The 2SD2206(T6PP) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-speed switching and amplifier applications.

Applications

• High-speed switching circuits
• Amplifier circuits
• Inverter circuits
• DC-DC converters
• Motor control circuits

Features

• High collector current (IC = 2A)
• Low saturation voltage (VCE(sat) = 0.5V max)
• High transition frequency (fT = 100 MHz typ.)
• Excellent switching characteristics
• RoHS compliant

Benefits

• Efficient high-speed switching due to low saturation voltage and fast switching times.
• Suitable for a variety of applications because of its versatile design and specifications.
• Improved circuit performance thanks to high transition frequency.
• Environmentally friendly due to RoHS compliance.
• Reliable performance under various operating conditions.

Additional Details

The 2SD2206(T6PP) features a collector-emitter voltage (VCEO) of 60V and a collector current (IC) of 2A. Its power dissipation (PC) is 1W. It operates within a temperature range of -55°C to +150°C. The package is a small, surface-mount type, facilitating compact circuit design. The transistor's high transition frequency and low saturation voltage make it ideal for applications requiring efficient switching and amplification.