The 2SC5858 is a silicon NPN bipolar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplification and low-noise applications.

Applications

• Low-noise amplifiers (LNA)
• RF amplifiers
• Oscillators
• Mixers
• High-frequency communication equipment

Features

• Low noise figure
• High gain bandwidth product
• High collector current capability
• Excellent linearity
• Small signal amplification

Benefits

• Enhanced signal clarity in sensitive receiver circuits
• Efficient amplification with minimal added noise
• Improved performance in high-frequency applications
• Reduced distortion in amplified signals
• Stable and reliable operation

Additional Details

The 2SC5858 is generally housed in a compact surface-mount package. Key electrical specifications include collector-emitter voltage (VCEO), collector current (IC), power dissipation (PC), and transition frequency (fT). The low noise figure is a critical characteristic for its intended applications. Refer to the official Toshiba datasheet for detailed specifications, including electrical characteristics, thermal data, and package information, before incorporating this transistor into any circuit design. Proper biasing and impedance matching are crucial to achieving optimal performance in high-frequency circuits.