The 2SC2712 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for low-noise amplifier applications, particularly in the VHF and UHF bands. This transistor is known for its high gain and low noise figure, making it suitable for sensitive receiver circuits and other applications demanding high performance.

Applications

• Low-noise amplifiers (LNA)
• VHF/UHF front-end circuits
• Radio receivers
• Television tuners
• Satellite communication equipment

Features

• NPN Silicon Epitaxial Planar Transistor
• Low Noise Figure: Ensures high sensitivity in receiving circuits.
• High Gain: Provides significant signal amplification.
• High Transition Frequency: Suitable for high-frequency operation.
• Small Package: Allows for compact circuit design.

Benefits

• Improved Signal Reception: Low noise figure enhances the ability to detect weak signals.
• Increased Amplification: High gain boosts signal strength effectively.
• Stable Operation: Reliable performance in demanding applications.
• Compact Design: Small package allows for integration into miniaturized devices.
• Versatile Usage: Suitable for various high-frequency, low-noise applications.

Technical Specifications

The 2SC2712 features a collector-emitter voltage (VCEO) typically around 20V, a collector current (IC) of about 30mA, and a power dissipation (PC) of around 150mW. Its transition frequency (fT) is typically in the GHz range, making it well-suited for high-frequency applications. The noise figure (NF) is very low, usually around 1dB at specified frequencies and bias conditions. The package type is typically a small signal transistor package like SOT-23 or similar.

This transistor is commonly used in communication devices, such as radios and satellite receivers, as well as in various test and measurement equipment. The combination of low noise, high gain, and high-frequency performance makes it a valuable component in sensitive electronic circuits.