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2SA1213

Part No 2SA1213
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1124380-2SA1213
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1213 CAD Model

Description

The 2SA1213 is a silicon PNP epitaxial planar transistor manufactured by Toshiba. It is designed for use in audio amplifier and general-purpose applications. This transistor offers reliable performance and is known for its low saturation voltage and high gain.

Applications

  • Audio Amplifiers: Used in audio amplification stages, such as preamplifiers and power amplifiers.
  • Switching Circuits: Implemented in circuits requiring high-speed switching capabilities.
  • General-Purpose Amplification: Employed in various electronic circuits for general amplification.
  • Driver Stages: Used to drive larger transistors or other high-current devices.
  • Linear Amplification: Suitable for linear amplification applications requiring high gain.

Features

  • Low Saturation Voltage: Ensures efficient switching with minimal power loss.
  • High Gain: Provides substantial amplification for weak input signals.
  • High Collector Current: Capable of handling a significant amount of collector current.
  • Epitaxial Planar Structure: Offers enhanced performance and reliability.
  • PNP Transistor: PNP transistor used to complement NPN transistors in circuit designs.

Benefits

  • Efficient Switching: Delivers fast and efficient switching capabilities.
  • Improved Audio Quality: Enhances audio signal amplification with minimal distortion.
  • Increased Circuit Performance: Boosts the overall performance and reliability of electronic circuits.
  • Versatile Application: Suitable for a wide range of amplifier and switching applications.
  • Reliable Operation: Ensures consistent and reliable performance in various operating conditions.

Technical Specifications

The 2SA1213 features a collector-emitter voltage (VCEO) of -60V, a collector current (IC) of -150mA, and a power dissipation (PC) of 500mW. It exhibits low saturation voltage and high gain (hFE). The transistor is commonly available in a through-hole package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
750+ $0.0668 $50.1000
1,825+ $0.0549 $100.1925
2,825+ $0.0531 $150.0075
3,895+ $0.0514 $200.2030
5,035+ $0.0497 $250.2395
6,730+ $0.0446 $300.1580
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Availability: 99,999 pieces
MOQ: 750 pcs
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