The 1SS294(TE85R.F) is a silicon epitaxial planar diode manufactured by Toshiba Semiconductor and Storage, designed for high-speed switching applications.

Applications

• High-speed switching circuits
• Detector circuits
• Mixer circuits
• Sampling circuits

Features

• Low Forward Voltage: Offers a low forward voltage drop, minimizing power loss in switching applications.
• Fast Reverse Recovery Time: Features a fast reverse recovery time, enabling high-speed switching.
• Small Capacitance: Exhibits a low junction capacitance, reducing signal distortion in high-frequency circuits.

Benefits

• Efficient Switching: Low forward voltage drop enhances the efficiency of switching circuits.
• High-Speed Performance: Fast reverse recovery time allows for rapid switching transitions, suitable for high-frequency applications.
• Reduced Signal Distortion: Low capacitance minimizes signal degradation in high-frequency circuits.

Additional Details

The 1SS294(TE85R.F) is typically available in a small surface mount package. Key specifications include a Peak Reverse Voltage (VRM) of 80V, a Forward Current (IF) of 100mA, and a Reverse Recovery Time (trr) of 4ns. It's designed to operate within a temperature range of -55°C to +125°C.