The TMS4464-10NL is a high-performance, 64K x 4 bit Dynamic Random Access Memory (DRAM) chip produced by Texas Instruments. This sophisticated memory module is designed to meet the needs of advanced computing systems requiring reliable and fast memory solutions. As a product from a leading semiconductor manufacturer, the TMS4464-10NL represents Texas Instruments' commitment to quality and innovation in the field of memory technology.

Key Features

• Memory Capacity: The chip offers a substantial storage capacity of 256 kilobits, organized as 64,000 words by 4 bits, catering to systems that demand moderate memory density.
• Speed: With an access time of 100 nanoseconds (10NL), this DRAM chip provides a swift response for read and write operations, making it suitable for applications that require high-speed data processing.
• Package: Enclosed in a 16-pin DIP (Dual In-line Package), the TMS4464-10NL ensures easy integration into a wide range of circuit boards and is compatible with standard sockets, facilitating simple installation and maintenance.
• Power Management: The device is designed for low power consumption, which is essential for creating energy-efficient systems.
• Operating Voltage: It operates at a standard voltage of 5V, which is common in many electronic systems, ensuring compatibility and ease of design integration.

Applications

The Texas Instruments TMS4464-10NL DRAM is ideal for various applications, including personal computers, workstations, servers, and other computing devices that require a balance of speed and storage capacity. Its robust design makes it a reliable choice for industrial and commercial systems that operate in challenging environments.

Reliability and Support

Texas Instruments is known for its high-quality products and the TMS4464-10NL is no exception. Customers can expect reliable performance, backed by Texas Instruments' comprehensive technical support and documentation. The TMS4464-10NL is a testament to TI's legacy of providing innovative solutions that push the boundaries of memory technology.