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LMG3410R070RWHR

Part No LMG3410R070RWHR
Manufacturer Texas Instruments
Catalog PMIC - Power Distribution Switches, Load Drivers
Description PWR MGMT MOSFET/PWR DRIVER / Power Switch/Driver 1:1 P-Channel 12A 32-VQFN (8x8)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Power Management (PMIC) - Power Distribution Switches, Load Drivers
Mfr Texas Instruments
Series -
Package Tape & Reel
Product Status Active
Switch Type Load Switch
Number of Outputs 1
Output Configuration High Side
Output Type P-Channel
Interface Logic, PWM
Voltage - Load 480V (Max)
Voltage - Supply (Vcc/Vdd) 9.5V ~ 18V
Current - Output (Max) 12A
Rds On (Typ) 70mOhm
Input Type Non-Inverting
Features Bootstrap Circuit, 5V Regulated Output
Fault Protection Over Current, Over Temperature, UVLO
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 32-VQFN (8x8)
Package / Case 32-VQFN Exposed Pad
Base Product Number LMG3410R070
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1372572-LMG3410R070RWHR
Ultra Librarian 3D Model Ultra Librarian LMG3410R070RWHR CAD Model

Description

LMG3410R070RWHR - Texas Instruments

The LMG3410R070RWHR is a state-of-the-art gallium nitride (GaN) power module from Texas Instruments, designed to deliver high efficiency and fast switching performance for a wide range of power conversion applications. This innovative power module integrates a GaN power transistor with an optimized driver and protection features to provide an advanced, all-in-one solution for designers looking to improve system performance while reducing size and complexity.

Key Features:

  • High Efficiency: The GaN FET technology offers lower switching and conduction losses compared to traditional silicon devices, enabling higher efficiency in power conversion systems.
  • Fast Switching: With its inherent fast switching capabilities, the LMG3410R070RWHR allows for higher frequency operation, which can reduce the size of magnetic and passive components.
  • Integrated Driver: The module includes a purpose-built driver optimized for GaN devices, simplifying the design process and ensuring optimal performance.
  • Advanced Protection: Built-in features such as overcurrent, overtemperature, and undervoltage lockout provide robust protection for the GaN transistor, enhancing system reliability.
  • Zero Reverse Recovery: GaN technology eliminates reverse recovery losses, further improving efficiency, especially in hard-switching applications.
  • Low Inductance Package: The LMG3410R070RWHR comes in a low inductance package that minimizes parasitic elements, which is crucial for high-speed switching performance.

Applications:

The versatility of the LMG3410R070RWHR makes it suitable for a variety of applications, including:

  • Telecom and server power supplies
  • Energy storage systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) chargers
  • Solar inverters

The LMG3410R070RWHR from Texas Instruments represents a significant leap forward in power electronics, providing designers with a powerful tool to create more efficient, compact, and reliable power systems for the demanding needs of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.0724 $56.5792
18+ $5.8030 $104.4540
27+ $5.6216 $151.7832
37+ $5.4403 $201.2911
48+ $5.2589 $252.4272
64+ $4.7149 $301.7536
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 470 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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