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TRS20N65D

Part No TRS20N65D
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Arrays
Description SiC Schottky Barrier Diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1273955-TRS20N65D
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TRS20N65D CAD Model

Description

The TRS20N65D is a high-voltage N-channel power MOSFET from Toshiba Semiconductor and Storage. It's designed for switching applications requiring high efficiency and reliability, particularly in power supplies, motor control, and lighting systems.

Applications:

  • Power Supplies: Used in AC-DC power supplies for servers, computers, and consumer electronics.
  • Motor Control: Employed in motor control circuits for industrial drives and appliances.
  • Lighting Systems: Found in LED lighting drivers and ballasts.
  • Uninterruptible Power Supplies (UPS): Used in UPS systems to provide backup power.
  • Inverters: Used in solar inverters and other power inverters.

Features:

  • 650V Drain-Source Voltage (V<sub>DSS): Suitable for high-voltage applications.
  • 20A Drain Current (I<sub>D): Capable of handling significant current loads.
  • Low On-Resistance (R<sub>DS(on)): Minimizes power losses and heat generation.
  • Fast Switching Speed: Enables efficient switching performance.
  • Avalanche Capability: Offers robustness against voltage spikes.
  • Easy to Use: Simple gate drive requirements.
  • RoHS Compliant: Complies with environmental regulations.

Benefits:

  • High Efficiency: Low on-resistance reduces power dissipation, improving overall efficiency.
  • Reliable Performance: Designed for stable and reliable operation in demanding conditions.
  • Reduced Heat Generation: Low R<sub>DS(on) minimizes heat, extending component lifespan.
  • Simplified Design: Easy to integrate into existing and new designs.
  • Robust Protection: Avalanche capability provides protection against voltage transients.
  • Cost-Effective: Offers a good balance of performance and cost.

Additional Details:

The TRS20N65D features a gate threshold voltage (V<sub>GS(th)) typically around 3V. Its low gate charge (Q<sub>g) contributes to its fast switching speed. The device is typically available in a TO-220 or similar through-hole package. Its thermal resistance allows for effective heat dissipation with proper heatsinking. Its R<sub>DS(on) is specified at a given gate-source voltage (e.g., 10V). Datasheets from Toshiba provide comprehensive information on specific electrical characteristics, thermal performance, and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.3213 $65.2852
9+ $13.3922 $120.5298
14+ $12.9730 $181.6220
19+ $12.5549 $238.5431
24+ $12.1367 $291.2808
32+ $10.8813 $348.2016
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 184 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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