The LM5113SDE/NOPB is a highly integrated gate driver specifically designed for enhancement-mode Gallium Nitride (GaN) Field-Effect Transistors (FETs). Manufactured by Texas Instruments, this gate driver is essential for modern power conversion applications that require low power losses and high efficiency.

Key Features

• Optimized for GaN FETs: The LM5113SDE/NOPB is tailored for driving GaN FETs, providing the necessary drive voltage levels and protection features.
• High-Speed Operation: With its ability to switch at high frequencies, the LM5113SDE/NOPB is suitable for high-speed power conversion systems.
• Dual Outputs: It features dual outputs for driving the gate of a GaN FET in both the high-side and low-side configurations.
• Integrated Dead-Time Control: To prevent shoot-through, the LM5113SDE/NOPB incorporates internal dead-time control.
• Under-Voltage Lockout (UVLO): The built-in UVLO feature ensures that the gate driver operates only when the supply voltage is sufficient.
• Thermal Shutdown: An integrated thermal shutdown function protects the device under high-temperature conditions.

Applications

The LM5113SDE/NOPB is ideal for a variety of applications where high efficiency and power density are crucial. These include:

• DC/DC Converters
• Synchronous Buck Converters
• Class-D Audio Amplifiers
• Wireless Power Transfer Systems
• AC/DC Power Supplies

Package and Quality

The LM5113SDE/NOPB comes in a compact WSON-10 package, making it suitable for space-constrained applications. Additionally, the "NOPB" suffix indicates that this product is part of Texas Instruments' eco-friendly range, which is free of lead and other environmentally harmful substances.

Conclusion

With its specialized design for GaN FETs, high-speed operation, and robust protection features, the LM5113SDE/NOPB from Texas Instruments is a reliable and efficient solution for advanced power conversion systems seeking to leverage the benefits of GaN technology.