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BQ4010YMA-70N

Part No BQ4010YMA-70N
Manufacturer Texas Instruments
Catalog SRAM
Description 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Texas Instruments
Packaging Tray
Part Status Obsolete(EOL)
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 64Kb (8K x 8)
Write Cycle Time - Word, Page 70ns
Access Time 70ns
Memory Interface Parallel
Operating Supply Voltage 4.5 V ~ 5.5 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting Style Through Hole
Package 28-DIP Module (0.61", 15.49mm)
Manufacturer Package 28-DIP Module (18.42x37.72)
Win Source Part Number 1154322-BQ4010YMA-70N
Manufacturer Homepage www.ti.com
Popularity Medium
Supply and Demand Status Limited
Family Name BQ4010Y
Introduction Date November 01, 2006
ECCN EAR99
Country of Origin Taiwan
Halogen Free Not Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian BQ4010YMA-70N CAD Model

Description

Product Overview: Texas Instruments BQ4010YMA-70N

The Texas Instruments BQ4010YMA-70N is a state-of-the-art nonvolatile SRAM module designed for a wide range of data storage applications that require high-speed access, reliability, and the security of data retention upon power loss. This innovative memory device combines the best of both worlds: the fast access times of SRAM with the non-volatility of EEPROM, making it an ideal choice for critical data storage requirements.

Key Features

  • High-Speed Access: The BQ4010YMA-70N boasts access times as low as 70 nanoseconds, enabling rapid read and write operations for time-sensitive applications.
  • Nonvolatile Storage: Utilizing an internal lithium battery, the device ensures data preservation for a minimum of 10 years in the absence of external power.
  • Large Memory Capacity: With a 512K x 8-bit configuration, this memory module provides ample space for storing critical data.
  • Automatic Power-Fail Switchover: The module includes an automatic power-fail switchover feature that transitions to battery backup mode seamlessly during power outages.
  • Low Power Consumption: Designed for energy efficiency, the BQ4010YMA-70N operates with low power demands, making it suitable for battery-powered and energy-sensitive applications.
  • Write Protection: A write-protect feature ensures data integrity by preventing unintended alterations to the memory contents.

Applications

The BQ4010YMA-70N is versatile and can be used in various applications, including:

  • Industrial control systems
  • Telecommunications equipment
  • Medical devices
  • Automotive electronics
  • Portable computing devices
  • Instrumentation and measurement systems

Quality and Reliability

Texas Instruments is renowned for its commitment to quality and reliability, and the BQ4010YMA-70N is no exception. It is built to meet the rigorous standards expected of industrial-grade components, ensuring performance and durability across a wide range of operating conditions.

In summary, the BQ4010YMA-70N from Texas Instruments represents a robust and reliable solution for applications that demand high-speed nonvolatile memory storage. Its combination of speed, capacity, and long-term data retention makes it an essential component for systems where data integrity and availability are paramount.

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