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Same model may have multiple batches, images only for reference.
TSM60N1R4CP Real Image
Same model may have multiple batches, images only for reference.

TSM60N1R4CP

Part No TSM60N1R4CP
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Description 600V 3.3A Single N-Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Breakdown Voltage 51 V
Clamping Voltage 70.1 V
Drain to Source Voltage (Vdss) 600 V
Forward Voltage 1 V
Gate to Source Voltage (Vgs) 3 V
Input Capacitance 370 pF
Max Breakdown Voltage 9.8 V
Max Forward Surge Current (Ifsm) 2.5 A
Max Junction Temperature (Tj) 150 °C
Max Repetitive Reverse Voltage (Vrrm) 250 V
Max Reverse Leakage Current 1 µA
Min Breakdown Voltage 25.4 V
Number of Channels 2
Peak Pulse Current 21.4 A
Peak Pulse Power 1.5 kW
Power Dissipation 200 mW
Reverse Recovery Time 50 ns
Reverse Standoff Voltage 24 V
RoHS Non-Compliant
Test Current 2.5 mA
Zener Voltage 75 V
Win Source Part Number 994348-TSM60N1R4CP
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSM60N1R4CP CAD Model

Description

The TSM60N1R4CP is a power MOSFET transistor manufactured by Taiwan Semiconductor.

  • Manufacturer: Taiwan Semiconductor
  • Type: Power MOSFET Transistor
  • Supply and Demand Status: Shortage
  • Popularity: Low
  • Maximum Drain to Source Voltage: 600V
  • Peak Pulse Current: 21.4A
  • RoHS Compliant: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.7406 $60.2932
52+ $2.2488 $116.9376
80+ $2.1785 $174.2800
110+ $2.1083 $231.9130
142+ $2.0379 $289.3818
190+ $1.8271 $347.1490
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Availability: 124 pieces
MOQ: 22 pcs
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