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TSM1N60CP

Part No TSM1N60CP
Manufacturer Taiwan Semiconductor
Catalog HOT - SALES and EOL Components (T)
Description N-Channel Power Enhancement Mode MOSFET
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Manufacturer Taiwan Semiconductor
Win Source Part Number 382516-TSM1N60CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM1N60CP CAD Model

Description

The TSM1N60CP is a high-voltage N-channel MOSFET from Taiwan Semiconductor designed for efficient power switching in various applications. It features a robust design with a high breakdown voltage, making it suitable for use in off-line power supplies, lighting applications, and other high-voltage circuits. Its characteristics balance switching speed and on-resistance for optimal performance.

Applications:

  • Off-Line Power Supplies: Used in AC-DC power supplies to switch high voltages.
  • LED Lighting: Controls current and voltage in LED lighting applications.
  • Power Factor Correction (PFC) Circuits: Improves power factor in electronic devices.
  • Electronic Ballasts: Drives fluorescent lamps efficiently.
  • Adapter and Charger Circuits: Found in power adapters for various electronic devices.

Features:

  • N-Channel Enhancement Mode: Simplifies gate drive requirements.
  • High Breakdown Voltage (VDS): Enables operation in high-voltage circuits.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • Fast Switching Speed: Improves efficiency in switching applications.
  • Avalanche Rated: Provides robustness against voltage transients.

Benefits:

  • Efficient Power Conversion: Low RDS(on) and fast switching minimize power losses.
  • High Reliability: Robust design ensures stable operation in demanding conditions.
  • Simplified Circuit Design: N-channel configuration simplifies gate drive.
  • Reduced Heat Generation: Efficient operation minimizes heat dissipation.
  • Improved System Performance: Contributes to overall efficiency and stability of the power system.

Additional Details:

The TSM1N60CP is typically available in a through-hole or surface-mount package, depending on the specific application requirements. Key parameters to consider during design include drain-source voltage (VDS), gate-source voltage (VGS), and drain current (ID). Thermal resistance is crucial for managing heat dissipation, especially at higher power levels. Refer to the datasheet for detailed electrical characteristics, package dimensions, and recommended operating conditions. Proper heat sinking may be required to maintain the device within its safe operating area.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1009 $63.0270
70+ $1.7244 $120.7080
105+ $1.6701 $175.3605
145+ $1.6158 $234.2910
185+ $1.5627 $289.0995
250+ $1.4010 $350.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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