The TSM19N20CPROG is an N-Channel enhancement mode MOSFET manufactured by Taiwan Semiconductor. It is designed for high-efficiency power switching applications.

Applications

• Synchronous rectification
• DC-DC converters
• Power tools
• Battery management systems
• Motor control

Features

• Low on-resistance (RDS(on))
• High avalanche energy
• Fast switching speed
• 100% UIS tested
• Lead-free and RoHS compliant

Benefits

• Improved efficiency in power conversion due to low on-resistance.
• Robust performance under inductive load conditions thanks to high avalanche energy.
• Reduced switching losses because of fast switching speed.
• Guaranteed reliability due to 100% UIS testing.
• Environmentally friendly due to lead-free and RoHS compliance.

Technical Specifications

The TSM19N20CPROG has a drain-source voltage (VDS) rating of 200V. The gate-source voltage (VGS) is rated at ±30V. It features a low on-resistance (RDS(on)), typically 0.145 Ohms at VGS = 10V. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. It is available in a TO-252 package, allowing for effective heat dissipation. The operating junction temperature ranges from -55°C to +150°C. The continuous drain current (ID) is rated at 19A.

In summary, the TSM19N20CPROG N-Channel MOSFET is a robust and efficient solution for a variety of power switching applications. Its combination of low on-resistance, high avalanche energy, and fast switching speed makes it well-suited for improving the efficiency and reliability of power conversion systems.