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SPP1413S32RG

Part No SPP1413S32RG
Manufacturer SYNC POWER Crop
Catalog Electronic Wholesale
Description P-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SYNC POWER Crop
Win Source Part Number 1258060-SPP1413S32RG
Manufacturer Homepage www.syncpower.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP1413S32RG CAD Model

Description

The SPP1413S32RG is a P-Channel enhancement mode MOSFET manufactured by SYNC POWER Crop. It is designed for efficient power management in a variety of applications. This MOSFET utilizes advanced trench technology to achieve a low on-resistance and fast switching, which contributes to high efficiency in power circuits.

Applications:

  • Load Switching: Efficient switching in various electronic devices.
  • Power Management in Portable Devices: Battery management and power regulation in smartphones and tablets.
  • DC-DC Converters: Voltage regulation and power conversion in DC-DC converters.
  • Motor Control: Used in low-power motor control applications.
  • Battery Protection Circuits: Provides overcharge and over-discharge protection.

Features:

  • P-Channel Enhancement Mode: Simplified gate drive requirements.
  • Low On-Resistance (RDS(on)): Minimizes power loss and enhances efficiency.
  • Fast Switching Speed: Reduces switching losses and improves performance.
  • Low Gate Charge (Qg): Efficient switching operation.
  • Compact Package: Space-saving designs.

Benefits:

  • High Efficiency: Low RDS(on) and fast switching minimize power losses.
  • Simplified Design: P-Channel configuration simplifies gate drive circuitry.
  • Compact Solution: Small package size enables integration into space-constrained applications.
  • Improved Thermal Performance: Efficient power handling reduces heat generation.
  • Reliable Operation: Stable and reliable performance.

The SPP1413S32RG is supplied in a surface-mount package for automated assembly. Electrical characteristics include drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). Thermal resistance is an important parameter for managing heat dissipation. This MOSFET meets industry standards for environmental compliance, such as RoHS.

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