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SPN1012S52RG

Part No SPN1012S52RG
Manufacturer SYNC POWER Crop
Catalog Electronic Wholesale
Description N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SYNC POWER Crop
Win Source Part Number 1257943-SPN1012S52RG
Manufacturer Homepage www.syncpower.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPN1012S52RG CAD Model

Description

The SPN1012S52RG is a Power MOSFET manufactured by SYNC POWER Corp. It is designed for high-efficiency power switching applications, offering a combination of low on-resistance and fast switching speeds.

Applications:

  • Synchronous rectification in AC/DC and DC/DC converters
  • Load switching
  • Power tools
  • Battery management systems
  • Motor control

Features:

  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Low gate charge (Qg)
  • Avalanche rated
  • RoHS compliant

Benefits:

  • High efficiency: Low on-resistance minimizes conduction losses, resulting in improved energy efficiency in power conversion applications.
  • Reduced heat dissipation: Lower RDS(on) translates to less heat generation, simplifying thermal management and increasing system reliability.
  • Fast switching performance: Enables higher operating frequencies, reducing the size and cost of passive components in power supply designs.
  • Robust operation: Avalanche rating ensures reliable performance under transient voltage conditions.

Additional Details:

The SPN1012S52RG offers a balance of key MOSFET parameters, making it a suitable choice for various power switching applications. The low gate charge contributes to reduced switching losses, while the avalanche rating enhances device robustness. The typical package is PDFN5x6. Refer to the SYNC POWER Corp. datasheet for detailed electrical characteristics, thermal resistance values, and application notes. The datasheet specifies the drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID) ratings, which are crucial for proper circuit design. The device's thermal resistance junction-to-case (RθJC) and junction-to-ambient (RθJA) values are important for determining the required heat sinking. The specified gate threshold voltage (VGS(th)) should also be considered when designing the gate drive circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1016 $57.9120
1,390+ $0.0832 $115.6480
2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,850+ $0.0751 $289.1350
5,085+ $0.0681 $346.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,130 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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