The VP0210N3 is a depletion-mode (normally-on) N-channel Vertical DMOS (Double-Diffused Metal-Oxide-Semiconductor) FET manufactured by Supertex, Inc. These transistors are specifically designed for high-voltage, low-current switching applications. Depletion-mode MOSFETs conduct current when the gate-source voltage is zero, unlike enhancement-mode MOSFETs which require a threshold voltage to turn on.

Applications

• Solid-state relays
• Current regulators
• High-voltage switching
• Analog switches
• Constant current sources

Features

• Depletion-mode (normally-on)
• High voltage operation
• Low on-resistance
• Fast switching speed
• Low input capacitance
• RoHS compliant

Benefits

• Simple circuit design due to normally-on characteristics
• Direct interface to high voltage sources
• Efficient switching with minimal power loss
• Improved system performance with fast switching speeds
• Reduced driver requirements due to low input capacitance

Additional Details

The VP0210N3 typically has a drain-source breakdown voltage (BVdss) of 200V and a continuous drain current (Id) of around 100mA. The on-resistance (Rds(on)) is typically a few ohms. The gate-source threshold voltage (Vgs(off)) is typically between -0.5V and -3V. The device is typically packaged in a small through-hole package (TO-92 or similar) for easy mounting. It operates over a wide temperature range, typically from -55°C to +150°C. These depletion-mode MOSFETs are often used in applications where a normally-on switch is required, or where a constant current source is needed. They are particularly useful in replacing mechanical relays with solid-state alternatives, offering faster switching speeds and longer lifespan. These transistors provide a reliable and efficient solution for high-voltage switching applications.