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TN0604N3

Part No TN0604N3
Manufacturer Supertex, Inc
Catalog Electronic Wholesale
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Sample
Rohs State rohs
ECAD Module
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Manufacturer Supertex, Inc
Win Source Part Number 1271449-TN0604N3
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TN0604N3 CAD Model

Description

The TN0604N3 is a N-Channel enhancement-mode vertical DMOS FET manufactured by Supertex, Inc. It's designed for low voltage, low on-resistance switching applications and is commonly used in solid-state relays, high-side switches, and power management circuits.

Applications:

  • Solid-State Relays: Used as the switching element in solid-state relays.
  • High-Side Switches: Controls power to a load from the high side of a power supply.
  • Power Management Circuits: Efficient switching for DC-DC converters and other power circuits.
  • LED Drivers: Used to control the current flow to LEDs.
  • Load Switching: General-purpose switching of resistive, inductive, and capacitive loads.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss during switching.
  • Low Gate Threshold Voltage (VGS(th)): Requires low voltage to turn on.
  • High Input Impedance: Minimizes drive current requirements.
  • Fast Switching Speed: Allows for high-frequency operation.
  • Avalanche Energy Rated: Withstands transient voltage spikes.

Benefits:

  • High Efficiency: Low RDS(on) reduces power dissipation.
  • Easy to Drive: Low gate threshold voltage simplifies driver circuit design.
  • Improved System Reliability: Avalanche energy rating provides protection against voltage transients.
  • Reduced Board Space: Available in a compact package.
  • Faster Switching: Enables higher frequency power conversion.

The TN0604N3 has a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating that varies depending on the case temperature. The low RDS(on) ensures minimal power loss, leading to higher efficiency. The gate threshold voltage is low, typically around 1V to 3V, allowing the MOSFET to be driven directly from logic-level signals. The high input impedance minimizes the current required from the driving circuit. The fast switching speed allows for high-frequency operation in switching power supplies and other applications. The avalanche energy rating provides robustness against transient voltage spikes. The device is available in a through-hole package. It is important to consult the datasheet for specific current and power dissipation ratings under various operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7595 $60.7600
190+ $0.6232 $118.4080
290+ $0.6038 $175.1020
400+ $0.5844 $233.7600
515+ $0.5648 $290.8720
685+ $0.5064 $346.8840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,580 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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