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STW70N60DM2

Part No STW70N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely high dv/dt ruggedness
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh DM2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 121nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5508pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 446W (Tc)
Rds On (Maximum) @ Id, Vgs 42 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262390-STW70N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW70N60DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW70N60DM2 CAD Model

Description

STW70N60DM2 - High-Performance N-Channel Power MOSFET

The STW70N60DM2 is a state-of-the-art N-channel Power MOSFET developed by STMicroelectronics, designed to meet the high efficiency and reliability demands of today's power electronics applications. This device is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its excellent on-state resistance (RDS(on)) and switching performance.

The STW70N60DM2 boasts a robust maximum continuous drain current of 70A, making it suitable for high-power applications. With a drain-source voltage (VDS) of 600V, it is well-equipped to handle the challenges of modern-day circuits that require high voltage capabilities. This component is particularly ideal for applications such as switch-mode power supplies (SMPS), lighting, welding, solar inverters, and high-performance drives.

One of the key features of this MOSFET is its very low on-state resistance of only 0.036 Ohm, which minimizes conduction losses and enhances overall efficiency. Moreover, the STW70N60DM2 is designed with a fast recovery diode, which is optimized for high-frequency operation and further reduces switching losses.

The MOSFET is encapsulated in a TO-247 long leads package, which ensures excellent heat dissipation and thermal management. This robust package is suitable for high-power and high-temperature applications, ensuring the MOSFET can operate reliably even under stressful conditions.

STMicroelectronics has incorporated several advanced technologies into the STW70N60DM2, such as the second generation of MDmesh™ technology. This technology combines a vertical structure with a proprietary strip layout to yield one of the best RDS(on) per area ratios. This results in reduced gate charge (Qg), improved diode reverse recovery characteristics, and enhanced dv/dt capability, which are critical for fast-switching applications.

Designed with the intention of simplifying the design process for engineers, the STW70N60DM2 includes a built-in ESD protection, which provides robustness and reliability during handling and operation. The device is also compliant with the stringent industrial standards, ensuring a high level of performance and quality that customers have come to expect from STMicroelectronics products.

In summary, the STW70N60DM2 from STMicroelectronics is a high-performance, energy-efficient, and reliable solution for a wide range of power applications. Its cutting-edge technology and robust design make it a preferred choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6383 $50.9362
30+ $3.4080 $102.2400
46+ $3.2929 $151.4734
66+ $3.0626 $202.1316
85+ $2.9475 $250.5375
106+ $2.8324 $300.2344
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Availability: 400 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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