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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 178nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5790pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 446W (Tc)
Rds On (Maximum) @ Id, Vgs 43 mOhm @ 34A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262383-STW60NM50N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW60NM50N
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian STW60NM50N CAD Model

Description

STW60NM50N - Power MOSFET by STMicroelectronics

The STW60NM50N is a high-performance N-channel 500V, 60A MDmesh™ DM2 Power MOSFET designed and manufactured by STMicroelectronics. This power MOSFET is engineered using an advanced proprietary technology that achieves the perfect balance between low on-resistance and fast switching performance, making it suitable for a wide range of high-efficiency applications.

The device boasts an extremely low on-state resistance (R<sub>DS(on)) of just 0.036 ohms, which significantly reduces conduction losses. Its high threshold voltage ensures reliability and robustness in operation, even under fluctuating voltage conditions. With a maximum junction temperature of 150°C, the STW60NM50N is built to withstand high thermal environments, ensuring stability and longevity in challenging conditions.

One of the key features of the STW60NM50N is its MDmesh™ DM2 technology, which combines a vertical structure with a new proprietary diffusion process. This innovative approach allows for reduced gate charge (Q<sub>g), lower input capacitance (C<sub>iss), and minimized power dissipation during switching, translating to improved overall efficiency in power conversion systems.

The STW60NM50N is encapsulated in a TO-247 long leads package, which offers excellent thermal performance and is compatible with a wide range of heat-sinking options. Its robust package design ensures mechanical ruggedness and simplifies the assembly process, making it a preferred choice for designers.

Applications for the STW60NM50N are diverse and include high-efficiency switch-mode power supplies (SMPS), lighting control systems, welding equipment, solar inverters, UPS systems, and any other scenario where power efficiency is paramount.

STMicroelectronics provides comprehensive technical support for the STW60NM50N, including datasheets, application notes, and simulation models. This support, coupled with the MOSFET's performance characteristics, makes it an excellent choice for engineers looking to enhance the efficiency and reliability of their power management systems.

In summary, the STW60NM50N from STMicroelectronics represents a state-of-the-art solution for power management challenges, offering superior efficiency, thermal performance, and reliability for a wide array of high-power applications.

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