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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH3
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 620V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 875pF @ 50V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 90W (Tc)
Rds On (Maximum) @ Id, Vgs 1.2 Ohm @ 2.8A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1262272-STU6N62K3
Manufacturer Homepage www.st.com
Family Name STU6N62K3
Introduction Date May 19, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STU6N62K3 CAD Model

Description

STU6N62K3 - N-channel 620 V, 3 Ω typ., 6 A SuperMESH™3 Power MOSFET in a DPAK package by STMicroelectronics

The STU6N62K3 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is part of the SuperMESH™3 family, which is renowned for its excellent efficiency and thermal performance. The STU6N62K3 is encapsulated in a DPAK package, which is not only robust but also compact, making it suitable for a wide range of applications, including switch-mode power supplies, lighting, motor control, and industrial applications.

With a drain-source voltage (V<sub>DS) of 620 V, the STU6N62K3 can handle high voltage operations with ease, making it ideal for power conversion applications that require high breakdown voltage. The device features an extremely low on-resistance (R<sub>DS(on)) of just 3 Ω typical, which translates to reduced conduction losses and improved overall efficiency. This low on-resistance is maintained over a wide range of operating temperatures, ensuring consistent performance.

The device boasts a continuous drain current (I<sub>D) of 6 A, which allows it to drive significant loads without overheating. The STU6N62K3 also offers fast switching performance, which is crucial for reducing switching losses and improving the efficiency of power conversion circuits. Additionally, the MOSFET has a very low gate charge (Q<sub>g), which minimizes the power required to drive the gate, thus further enhancing the energy efficiency of the system it's integrated into.

STMicroelectronics has equipped the STU6N62K3 with Zener-protected gate, providing inherent protection against electrostatic discharge (ESD) and enhancing the reliability of the device in rugged environments. The MOSFET is also 100% avalanche tested, guaranteeing robustness and long-term reliability.

Overall, the STU6N62K3 from STMicroelectronics represents a perfect blend of high voltage capability, low on-resistance, high current handling, and fast switching performance, all packed in a space-saving DPAK package. It is a top choice for designers looking to optimize their power management solutions with a reliable, efficient, and cost-effective MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0527 $51.3175
60+ $1.6843 $101.0580
92+ $1.6316 $150.1072
127+ $1.5790 $200.5330
164+ $1.5264 $250.3296
220+ $1.3685 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 116 pieces
MOQ: 25 pcs
Order Increment : 1 piece
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