STU2LN60K3 - N-channel 600 V, 1.9 Ω typ., 2 A SuperMESH™3 Power MOSFET in a DPAK package from STMicroelectronics

The STU2LN60K3 is a high voltage MOSFET designed to deliver the best in class performance for efficiency and reliability in a wide range of applications. Manufactured by STMicroelectronics, a global semiconductor leader, this power MOSFET is part of the SuperMESH™3 family, known for its outstanding dielectric strength, fast switching speed, and low on-resistance.

Key Features

• High Voltage Capability: With a drain-source voltage of 600 V, the STU2LN60K3 is suitable for high voltage applications, providing a robust and efficient solution for power conversion.
• Low On-Resistance: The device boasts a typical on-resistance of just 1.9 Ω, which enhances its overall efficiency by minimizing conduction losses.
• High Current Rating: With a continuous drain current of 2 A, this MOSFET can handle significant current, making it ideal for a variety of power applications.
• Reduced Gate Charge: The low gate charge ensures faster switching performance, which is critical for high-frequency power converters and other demanding applications.
• 100% Avalanche Tested: Guaranteeing reliability, each unit is tested for avalanche ruggedness, ensuring the device can withstand high energy pulses.
• DPAK Package: The surface-mount DPAK package offers a compact footprint and excellent thermal performance, making it suitable for space-constrained applications.

Applications

The STU2LN60K3 is versatile and can be used in a variety of applications, including:

• Switching power supplies
• Power adapters
• Power factor correction circuits
• Lighting applications
• Motion control

Conclusion

The STU2LN60K3 from STMicroelectronics is a testament to the company's commitment to providing advanced power MOSFETs that meet the evolving needs of the electronics industry. With its high voltage capability, low on-resistance, and fast switching speeds, this MOSFET is an excellent choice for designers looking to improve the performance and reliability of their power management systems.