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STPSC8H065D

Part No STPSC8H065D
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 8A TO220AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.75V @ 8A
Speed(Frequency) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 80μA @ 650V
Capacitance @ Vr, F 414pF @ 0V, 1MHz
Mounting Through Hole
Case / Package TO-220AC
Operating Temperature - Junction -40°C to 175°C
Win Source Part Number 194748-STPSC8H065D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STPSC8H065D CAD Model

Description

STPSC8H065D - Silicon Carbide Power Schottky Diode

The STPSC8H065D, from STMicroelectronics, is a state-of-the-art Silicon Carbide (SiC) Power Schottky Diode designed to deliver high-efficiency, improved thermal characteristics, and reduced energy losses. This diode is a perfect choice for high-performance power electronics systems where efficiency and reliability are critical.

Key Features

  • Voltage Rating: The STPSC8H065D is rated for a repetitive reverse voltage (V<sub>RRM) of 650V, making it suitable for high-voltage applications.
  • Current Capacity: With a forward current (I<sub>F) of 8A, this diode can handle significant current, appropriate for a wide range of power applications.
  • Low Forward Voltage Drop: The low forward voltage drop (V<sub>F) reduces conduction losses and enhances overall system efficiency.
  • Switching Performance: Fast switching speeds with negligible switching losses are a hallmark of SiC diodes, contributing to the device's high efficiency.
  • Temperature Performance: The STPSC8H065D operates effectively over a wide temperature range, ensuring reliability in various environmental conditions.

Applications

The versatility of the STPSC8H065D allows it to be used in a variety of applications, including but not limited to:

  • Switching power supplies
  • Power inverters
  • Motor drives
  • Power factor correction circuits

Advantages of Silicon Carbide Technology

Silicon Carbide technology provides several advantages over traditional silicon in power devices:

  • Higher thermal conductivity allows for better heat dissipation and improved thermal management.
  • Higher breakdown field strength and carrier saturation velocity enable devices to operate at higher voltages and temperatures.
  • Reduced energy losses during switching and conduction phases lead to more efficient power conversion.

The STPSC8H065D represents STMicroelectronics' commitment to innovation in power electronics, providing designers with a robust and efficient diode option that leverages the benefits of Silicon Carbide technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9450 $51.9750
130+ $0.7754 $100.8020
200+ $0.7512 $150.2400
280+ $0.7270 $203.5600
360+ $0.7027 $252.9720
480+ $0.6300 $302.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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