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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Maximum) at If 1.75V at 6A
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 60μA at 650V
Mounting Style Through Hole
Manufacturer Package TO-220-2 Insulated, TO-220AC
Supplier Device Package TO-220AC ins
Operating Temperature - Junction -40°C ~ 175°C
Family Part Number STPSC6H065
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261944-STPSC6H065DI
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STPSC6H065DI CAD Model

Description

STPSC6H065DI - A Robust Silicon Carbide Diode from STMicroelectronics

The STPSC6H065DI is a cutting-edge Silicon Carbide (SiC) Power Schottky Diode designed and manufactured by STMicroelectronics, a global semiconductor leader. This diode is engineered to provide high-efficiency power conversion in a wide range of applications, including solar inverters, motor drives, and electric vehicle charging systems.

With its remarkable SiC technology, the STPSC6H065DI offers superior switching performance and higher reliability compared to traditional silicon-based diodes. The device features a low forward voltage drop (V<sub>F) and reduced reverse recovery time (t<sub>rr), which significantly enhances the overall system efficiency and reduces thermal management requirements.

The STPSC6H065DI can handle a high continuous forward current (I<sub>F) of up to 6 A and has a maximum operating junction temperature of 175°C, ensuring stable operation even under extreme conditions. Its robust design is encapsulated in a highly durable TO-220AC package, providing excellent mechanical strength and ease of mounting on a heatsink.

Main Features:

  • No reverse recovery charge, enabling high-speed switching and reduced switching losses.
  • High surge current capability, ensuring robustness during transient conditions.
  • Low leakage current, which improves the efficiency and reliability of the device.
  • High-temperature operation, with a maximum junction temperature of 175°C.

The combination of its high-performance characteristics makes the STPSC6H065DI an ideal choice for designers seeking to develop more compact, efficient, and reliable power conversion systems. By leveraging the advantages of SiC technology, this diode helps in achieving higher power densities and more efficient energy usage, which is crucial for sustainable and innovative electronic solutions.

In summary, the STPSC6H065DI from STMicroelectronics represents a significant step forward in power semiconductor technology, offering an exceptional balance of efficiency, reliability, and performance for a wide range of power applications.

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