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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr STMicroelectronics
Series ECOPACK®
Package Tape & Reel
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V
Capacitance @ Vr, F 725pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC10
Other Names 497-17314-1,497-17314-2,497-17314-6,STPSC10H12G-TR
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1281992-STPSC10H12G-TR
Ultra Librarian 3D Model Ultra Librarian STPSC10H12G-TR CAD Model

Description

The STPSC10H12G-TR is a cutting-edge silicon carbide (SiC) Schottky diode, engineered by STMicroelectronics, a leader in semiconductor solutions. This robust diode is designed to offer superior switching performance and increased reliability for a wide range of power applications. It is particularly well-suited for high-frequency power converters thanks to its negligible switching losses and high temperature resilience.

Key Features

  • No Reverse Recovery: The SiC material properties allow for zero reverse recovery, resulting in minimal switching losses and increased efficiency.
  • High Surge Capability: With its excellent surge current capability, the STPSC10H12G-TR can handle high peak currents, ensuring reliability under stress conditions.
  • Temperature Performance: The device operates exceptionally well at high temperatures, maintaining stable performance where traditional silicon diodes falter.
  • Low Forward Voltage Drop: The diode's low forward voltage drop reduces power dissipation and improves thermal management, making it ideal for energy-sensitive applications.

Applications

The STPSC10H12G-TR is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • High-frequency inverters
  • Energy storage systems
  • Electric vehicle (EV) charging stations
  • Photovoltaic inverters

Product Specifications

The STPSC10H12G-TR boasts a repetitive peak reverse voltage (V<sub>RRM) of 1200 V and a forward current (I<sub>F) of 10 A, making it suitable for handling high voltage and current levels. It comes in a surface-mount DPAK (TO-252) package, which is widely used in industry and compatible with standard PCB assembly processes.

Conclusion

STMicroelectronics' STPSC10H12G-TR silicon carbide diode is a high-performance solution that offers efficiency, reliability, and thermal stability for advanced power conversion applications. Its robust design and excellent electrical characteristics make it an ideal choice for engineers looking to enhance system performance while reducing energy consumption.

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