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STP30NM30N

Part No STP30NM30N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh™ II Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 160W (Tc)
Rds On (Maximum) @ Id, Vgs 90 mOhm @ 15A, 10V
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1261714-STP30NM30N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Family Name STP30NM30N
Introduction Date April 16, 2007
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Halogen Free Compliant
Estimated EOL Date 2019
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP30NM30N CAD Model

Description

STP30NM30N - N-Channel MOSFET by STMicroelectronics

The STP30NM30N is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to meet the rigorous demands of a wide range of electronic applications, offering a perfect balance between efficiency and reliability.

Key Features

  • Low Threshold Drive: The STP30NM30N operates at a low gate threshold voltage, making it suitable for low voltage applications and ensuring ease of drive.
  • High Current Capacity: With a continuous drain current of up to 30A, this MOSFET can handle significant power, making it ideal for high-performance circuits.
  • High Voltage Tolerance: The device can withstand drain-source voltages of up to 300V, providing robust performance for high voltage applications.
  • Low On-Resistance: The low RDS(on) value ensures minimal power loss and heat generation, enhancing overall efficiency.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stress conditions.

Applications

The versatility of the STP30NM30N allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting
  • Automotive Applications

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STP30NM30N is no exception, as it is manufactured using state-of-the-art technology and subjected to stringent quality control processes. This ensures that each MOSFET delivers consistent performance and longevity, even in the most demanding environments.

Environmental Compliance

With environmental concerns in mind, the STP30NM30N adheres to international standards such as RoHS and is free from environmentally harmful substances. This commitment to sustainability makes it an environmentally friendly choice for electronic designs.

In summary, the STP30NM30N N-Channel MOSFET from STMicroelectronics is a robust and efficient solution for power switching and management applications, offering designers a reliable and high-performance component for their electronic designs.

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