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STP30N10F7

Part No STP30N10F7
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 100V 32A TO220AB / High avalanche ruggedness
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 24mOhm at 16A, 10V
Vgs(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1270pF at 50V
Power Dissipation (Maximum) 50W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Part Number Series STP30N
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804645-STP30N10F7
Ultra Librarian 3D Model Ultra Librarian STP30N10F7 CAD Model

Description

STP30N10F7 - N-Channel MOSFET from STMicroelectronics

The STP30N10F7 is a powerful N-channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver high performance and reliability for a wide range of applications, including power supply, conversion systems, and motor drives.

With a robust and efficient technology, the STP30N10F7 features a drain-source voltage (VDS) of 100V, which makes it suitable for high voltage operations. It is capable of handling continuous drain currents (ID) up to 30A, ensuring that it can support substantial power handling requirements. The device is characterized by an extremely low on-resistance (RDS(on)) of only 0.045Ω, which contributes to its high efficiency by minimizing conduction losses.

The STP30N10F7 is housed in a TO-220 package, which is widely accepted for its thermal and mechanical robustness. The package is designed to offer excellent heat dissipation characteristics, ensuring the MOSFET operates within its specified temperature range even under high current conditions. This contributes to the longevity and reliability of the device.

Among its features, the STP30N10F7 includes a fast switching capability which is essential for applications that require quick response times. Additionally, the MOSFET comes with an avalanche ruggedness that provides protection against unexpected voltage spikes, making it suitable for tough environmental conditions.

The combination of these features makes the STP30N10F7 an excellent choice for designers looking for a MOSFET with high power density, efficiency, and reliability. Its application versatility ranges from power management solutions to high-performance computing and industrial applications, demonstrating its ability to meet the demands of modern electronic circuits.

For detailed specifications, application notes, and additional resources, engineers and product designers are encouraged to visit the STMicroelectronics website or consult the STP30N10F7 datasheet. This ensures a comprehensive understanding of the product's capabilities and how to integrate it effectively into their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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