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STP20NM65N

Part No STP20NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1280pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 270 mOhm @ 7.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 1261699-STP20NM65N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP20NM65N
Introduction Date September 12, 2007
ECCN EAR99
Country of Origin China ,India ,Malaysia ,Morocco ,Philippines ,Republic of Korea ,Singapore
Halogen Free Compliant
Estimated EOL Date Obsolete
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP20NM65N CAD Model

Description

The STP20NM65N is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is part of ST's MDmesh™ V series, which is renowned for its excellent performance in high voltage applications. The STP20NM65N is specifically engineered to address the demanding requirements of modern electronic circuits, delivering both high efficiency and reliability.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STP20NM65N is well-suited for applications that require high breakdown voltage.
  • Low On-Resistance: The device features an exceptionally low on-resistance (R<sub>DS(on)) that minimizes conduction losses, thereby enhancing overall efficiency.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures that the STP20NM65N can switch on and off rapidly, which is crucial for high-frequency power conversion applications.
  • High dv/dt Capability: The MOSFET is designed to withstand high voltage transients, making it reliable in rugged environments.
  • Zener-Protected: The gate of this MOSFET is protected by an integrated Zener diode, safeguarding it against electrostatic discharge (ESD) and enhancing its ruggedness.

Applications

The STP20NM65N is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • LED Lighting applications
  • High-efficiency DC-DC converters
  • Welding equipment
  • Uninterruptible Power Supplies (UPS)

Quality and Environmental Compliance

Committed to environmental sustainability and quality, STMicroelectronics ensures that the STP20NM65N meets various international standards. The device is compliant with RoHS (Restriction of Hazardous Substances) and is designed to meet the requirements for industrial-grade components. It embodies ST's dedication to delivering high-performance products that are also environmentally conscious.

With its robust design and advanced technology, the STP20NM65N is an ideal choice for designers looking to create efficient, high-performing power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6794 $58.7790
85+ $1.3779 $117.1215
130+ $1.3352 $173.5760
180+ $1.2924 $232.6320
235+ $1.2497 $293.6795
310+ $1.1204 $347.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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