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STP18N60M2

Part No STP18N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 600V TO-220 / Low gate input resistance
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 6.5A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21.5nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 791pF at 100V
Power Dissipation (Maximum) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Part Number Series STP18N
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814144-STP18N60M2
Ultra Librarian 3D Model Ultra Librarian STP18N60M2 CAD Model

Description

The STP18N60M2 from STMicroelectronics is a robust and high-performance N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its outstanding efficiency at high switching frequencies.

Key Features

  • Advanced MDmesh™ M2 Technology: Utilizes an innovative vertical structure, providing improved RDS(on) and reduced gate charge (Qg), which enhances the overall efficiency of the MOSFET.
  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, it is suitable for high voltage applications, ensuring safe operation under stressful conditions.
  • Low On-Resistance: Features a low on-state resistance (RDS(on)) of 0.165 ohm, minimizing conduction losses and improving power efficiency.
  • High Current Rating: Capable of handling continuous drain current (ID) up to 13A, making it suitable for high current applications.
  • Fast Switching Performance: Fast switching speeds reduce switching losses and improve the performance in high-frequency power conversion systems.
  • 100% Avalanche Tested: Guarantees reliable operation even under the most demanding conditions, ensuring robustness and longevity.
  • Low Gate Charge: The low gate charge ensures that the power required to switch the MOSFET is minimized, which is beneficial for power-sensitive designs.

Applications

The STP18N60M2 is ideal for a variety of applications where efficiency and power density are critical. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-efficiency DC/DC converters
  • Welding equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar inverters and renewable energy systems

Conclusion

The STP18N60M2 is a testament to STMicroelectronics' commitment to providing innovative power solutions. With its advanced technology, high voltage and current capabilities, and fast switching performance, this Power MOSFET is an excellent choice for designers seeking to optimize their power management systems for both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8490 $50.9400
130+ $0.7953 $103.3890
200+ $0.7684 $153.6800
280+ $0.7147 $200.1160
365+ $0.6878 $251.0470
455+ $0.6610 $300.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,700 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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