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Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 480mOhm at 6.5A, 10V
Vgs(th) (Maximum) at Id 4.5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 47nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1600pF at 25V
Power Dissipation (Maximum) 140W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Part Number Series STP13N
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 808747-STP13NK50Z
Ultra Librarian 3D Model Ultra Librarian STP13NK50Z CAD Model

Description

STP13NK50Z - N-Channel 500V - 0.35Ω - 11A - TO-220/TO-220FP Zener-Protected SuperMESH™ Power MOSFET

The STP13NK50Z is a high voltage Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This device is part of the SuperMESH™ series, which is known for its exceptional performance in terms of both efficiency and reliability. The STP13NK50Z is particularly suitable for a wide range of applications, including switch-mode power supplies, high-efficiency converters, and power management solutions.

With a drain-source voltage (V<sub>DS) of 500V, the STP13NK50Z is capable of handling high voltage applications with ease. It features a low on-resistance (R<sub>DS(on)) of 0.35Ω, which helps in reducing conduction losses and improving overall device efficiency. The device can support a continuous drain current (I<sub>D) of 11A, making it suitable for handling significant power levels.

One of the key features of the STP13NK50Z is its Zener-protected gate, which provides enhanced protection against overvoltage, ensuring the longevity and stability of the MOSFET. This makes it an excellent choice for designs that require an extra layer of security against electrical stress.

The MOSFET comes in a TO-220/TO-220FP package, which is widely used and favored for its thermal and electrical performance. The package is designed to offer good heat dissipation, which is critical for maintaining the performance and reliability of the device at high power and high temperature operating conditions.

The SuperMESH™ technology combines a vertical structure with a patented strip layout, providing one of the best R<sub>DS(on) per area ratios among high voltage MOSFETs. This technology also allows for reduced gate charge and capacitance, leading to faster switching speeds and further efficiency improvements in applications such as power factor correction (PFC) circuits.

Overall, the STP13NK50Z is a robust and versatile component that offers designers a high level of performance and protection for their power management and conversion applications. Its combination of high voltage capability, low on-resistance, and Zener protection makes it a top choice for modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.8289 $69.9468
28+ $4.7824 $133.9072
42+ $4.6337 $194.6154
58+ $4.4836 $260.0488
75+ $4.3348 $325.1100
100+ $3.8860 $388.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,000 pieces
MOQ: 12 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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