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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 64A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 4.5V
Gate Source Voltage (Maximum) +22V, -20V
Input Capacitance (Ciss) (Maximum) at Vds 950pF at 25V
Power Dissipation (Maximum) 4.8W, 62.5W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package PowerFlat (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261333-STL58N3LLH5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL58N3LLH5 CAD Model

Description

STL58N3LLH5 N-channel MOSFET by STMicroelectronics

The STL58N3LLH5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the industry's leading semiconductor manufacturers. This product is a testament to STMicroelectronics' commitment to providing energy-efficient and high-reliability components for a wide range of electronic applications.

The STL58N3LLH5 is part of the STripFET™ H5 series, which features some of the latest advancements in MOSFET technology. With a 30V drain-source voltage (V<sub>DS) and a 58A continuous drain current (I<sub>D), it is designed to handle significant power and efficiency for various switching applications. The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, enhancing its suitability for low-voltage operations.

This MOSFET is characterized by its low on-resistance (R<sub>DS(on)), which stands at an impressive 3.3 mΩ typical value at V<sub>GS = 10 V. The low R<sub>DS(on) translates to reduced conduction losses, making the STL58N3LLH5 an excellent choice for power-intensive applications where efficiency is paramount. Furthermore, the device boasts a low gate charge (Q<sub>g), which minimizes switching losses and improves overall performance in high-frequency circuits.

The STL58N3LLH5 comes in a PowerFLAT™ 5x6 package, which not only offers a compact footprint but also an excellent thermal performance. This package design allows for a highly efficient heat dissipation, ensuring the MOSFET operates within its specified temperature range even under high current conditions. This makes the STL58N3LLH5 suitable for applications such as DC-DC converters, motor control circuits, and power management systems where space and thermal efficiency are critical.

STMicroelectronics has equipped the STL58N3LLH5 with 100% avalanche tested ruggedness, providing additional reliability and robustness against harsh operating conditions. This feature ensures that the device can withstand high energy pulses in the avalanche and commutation modes, which is essential for applications subject to frequent voltage spikes.

In summary, the STL58N3LLH5 N-channel MOSFET from STMicroelectronics is a powerful and efficient solution for designers looking to enhance the performance of their power management systems. With its advanced technology, compact packaging, and robust design, it stands out as a top choice for a wide array of electronic applications.

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