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STL23NM60ND

Part No STL23NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) PowerFLAT™ (8x8) HV
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series FDmesh II
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2050pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 3W (Ta), 150W (Tc)
Rds On (Maximum) @ Id, Vgs 180 mOhm @ 10A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package PowerFlat (8x8) HV
Package 4-PowerFlat HV
Win Source Part Number 1261320-STL23NM60ND
Manufacturer Homepage www.st.com
Family Name STL23NM60ND
Introduction Date April 28, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian STL23NM60ND CAD Model

Description

The STL23NM60ND is a highly efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This particular MOSFET is part of the MDmesh™ II Plus low Qg series, which is renowned for its excellent switching performance and energy efficiency. It is a great choice for a wide range of applications, including switch-mode power supplies, LED lighting, DC-AC inverters for solar systems, and motor control circuits.

Key Features

  • Low On-Resistance (Rds(on)): The STL23NM60ND boasts a very low on-state resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for high-current applications.
  • High Voltage Capability: With a drain-source voltage (Vds) of 600V, this MOSFET can handle high voltage applications with ease, providing reliable performance in demanding environments.
  • Reduced Gate Charge (Qg): The low gate charge ensures faster switching speeds, which is essential for reducing switching losses in power conversion applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the device may experience high energy pulses.

Applications

The STL23NM60ND is versatile and can be used in various applications due to its high efficiency and robustness. Some of the typical applications include:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • LED lighting solutions
  • Solar inverters and photovoltaic systems
  • Uninterruptible power supplies (UPS)
  • Motor control drives

Environmental and Quality Certifications

The STL23NM60ND complies with various environmental and quality standards, ensuring that it meets the highest levels of safety and reliability. It is RoHS compliant and adheres to the STMicroelectronics commitment to sustainability and environmental responsibility.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9901 $63.9208
18+ $6.5560 $118.0080
28+ $6.3511 $177.8308
38+ $6.1462 $233.5556
49+ $5.9415 $291.1335
66+ $5.3268 $351.5688
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,800 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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