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STL22N65M5

Part No STL22N65M5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Low gate input resistance | MOSFET N CH 650V 15A PWRFLT8X8HV
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 210mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1345pF at 100V
Power Dissipation (Maximum) 2.8W, 110W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package PowerFlat (8x8) HV
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 3 (168 Hours)
Win Source Part Number 1261319-STL22N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STL22N65M5 CAD Model

Description

STL22N65M5 - STMicroelectronics

The STL22N65M5 is a state-of-the-art N-channel 650 V MDmesh™ M5 Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This product is designed using the innovative fifth generation of MDmesh technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and excellent switching performance, making it suitable for a wide range of high-efficiency applications.

With a drain-source voltage (VDS) of 650 V, the STL22N65M5 is engineered to handle high voltage operations with ease, offering a maximum continuous drain current (ID) of 22 A at 25°C. This robust MOSFET is capable of withstanding high energy pulses in the avalanche and commutation modes, ensuring reliability and longevity in demanding scenarios.

The STL22N65M5 features a low gate charge (Qg), which translates to reduced switching losses and enhances the overall efficiency of power conversion systems. The low input capacitance (Ciss) and output capacitance (Coss) further optimize the switching performance and reduce the total power dissipation, contributing to energy savings in electronic designs.

One of the key advantages of the STL22N65M5 is its very low on-state resistance (RDS(on)), which minimizes conduction losses and improves the thermal performance of the device. This feature, combined with the enhanced dv/dt capability, makes this MOSFET an excellent choice for resonant and soft-switching topologies commonly found in high-efficiency power supplies, lighting applications, solar inverters, and welding equipment.

The STL22N65M5 is housed in a robust and compact TO-220FP package, which is designed to offer good thermal performance and ease of mounting on a printed circuit board (PCB). The package is optimized for use with standard industry footprints, allowing for seamless integration into a variety of electronic assemblies.

STMicroelectronics is committed to environmental sustainability, and the STL22N65M5 is no exception. It is compliant with RoHS and Halogen-free standards, ensuring that it meets the requirements for environmentally conscious manufacturing and product usage.

In summary, the STL22N65M5 from STMicroelectronics is a high-performance, energy-efficient power MOSFET that is ideal for designers looking to enhance the efficiency and reliability of their high-voltage power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.9106 $55.3742
16+ $6.4908 $103.8528
24+ $6.2880 $150.9120
33+ $6.0851 $200.8083
43+ $5.8823 $252.9389
57+ $5.2738 $300.6066
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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