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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series DeepGATE, STripFET VII
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 12800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 315W (Tc)
Rds On (Maximum) @ Id, Vgs 2.5 mOhm @ 60A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package TO-263-7, D2Pak (6 Leads + Tab) Variant
Win Source Part Number 1261073-STH310N10F7-6
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STH310N10F7-6
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STH310N10F7-6 CAD Model

Description

STH310N10F7-6 Power MOSFET by STMicroelectronics

The STH310N10F7-6 is a highly efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its advanced and innovative electronics solutions. This power MOSFET is part of ST's STripFET F7 series, which aims to provide high-performance power conversion in a wide range of applications.

With a robust and rugged design, the STH310N10F7-6 features a maximum drain-source voltage (V<sub>DS) of 100V, making it suitable for high voltage operations. Its low on-state resistance (R<sub>DS(on)) of just 3.1 mΩ at V<sub>GS = 10V ensures high efficiency and reduced power losses during operation, which is critical for energy-sensitive designs.

This Power MOSFET is capable of handling continuous drain currents (I<sub>D) up to 180A, providing ample current for demanding applications. The device is also characterized by an excellent figure of merit (FOM), which is a measure of its switching performance and conduction losses, making it an ideal choice for high-frequency power switching and synchronous rectification in computing and telecom power supplies.

The STH310N10F7-6 is housed in an H2PAK-6 package, which offers a compact footprint while still ensuring good thermal performance. This package is optimized for use in a variety of environments and mounting scenarios, including surface mount technology (SMT) processes.

Key features of the STH310N10F7-6 include:

  • 100V drain-source voltage (V<sub>DS)
  • Low on-state resistance (R<sub>DS(on)) of 3.1 mΩ
  • High continuous drain current (I<sub>D) of 180A
  • Excellent power efficiency and thermal performance
  • Robust and reliable H2PAK-6 package

With these features, the STH310N10F7-6 is perfectly suited for a range of power applications, including DC-DC converters, motor drives, and other high-performance power management systems that require high efficiency, reliability, and thermal management.

STMicroelectronics' commitment to environmental sustainability is evident in the STH310N10F7-6, which is designed to meet the stringent requirements of the RoHS directive, ensuring minimal environmental impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.2514 $57.0056
10+ $11.6935 $116.9350
15+ $11.3281 $169.9215
21+ $10.9627 $230.2167
27+ $10.5972 $286.1244
36+ $9.5010 $342.0360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 19,870 pieces
MOQ: 4 pcs
Order Increment : 1 piece
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