STH130N10F3-2 Power MOSFET by STMicroelectronics

The STH130N10F3-2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, designed to deliver both efficiency and reliability for a wide array of applications. This device is part of STMicroelectronics' STripFET F3 series, which is known for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power management tasks.

Key Features

• Low On-Resistance: The STH130N10F3-2 boasts an exceptionally low on-resistance (R_DS(on)), which significantly reduces conduction losses and enhances the overall efficiency of the system it is integrated into.
• High Current Capability: With a continuous drain current (I_D) rating of up to 100A, this MOSFET can handle high current loads, making it suitable for demanding applications.
• 100V Drain-Source Voltage: The device supports a maximum drain-source voltage (V_DS) of 100V, providing a good safety margin for various electronic circuits.
• Low Gate Charge (Q_g): A low gate charge ensures faster switching performance, which is crucial for applications that require high-speed operation.
• Enhanced Thermal Performance: The STH130N10F3-2 is encapsulated in a TO-220 package, which offers excellent thermal performance and is easy to mount on a heatsink for improved heat dissipation.

Applications

The versatility of the STH130N10F3-2 makes it well-suited for a variety of applications, including:

• Switching regulators
• DC/DC converters
• Motor control systems
• Automotive applications
• Power management solutions

With its robust design and superior electrical characteristics, the STH130N10F3-2 from STMicroelectronics is an ideal choice for designers looking to enhance power efficiency and reliability in their next project. Its combination of low on-resistance, high current handling, and fast switching capabilities make it a go-to component for power electronic systems that require optimal performance.