The STGWS38IH130D is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This high-speed switch is designed to meet the increasing demands of modern power electronic applications, offering a perfect blend of low conduction and switching losses. The device is well-suited for a wide range of high-efficiency applications, including solar inverters, uninterruptible power supplies (UPS), motor drives, and high-performance power systems.
Key Features
- High current rating: The device can handle a continuous collector current of up to 38A at 100°C, making it suitable for high-power applications.
- High voltage capability: With a collector-emitter voltage (Vce) of 1300V, the STGWS38IH130D can efficiently manage high voltage operations.
- Low on-state voltage drop (Vce(on)): This feature ensures reduced conduction losses and improved efficiency during operation.
- Short-circuit ruggedness: The IGBT is equipped with a robust design that can withstand short-circuit conditions for a specified time, enhancing the reliability of the overall system.
- Co-packaged with a freewheeling diode: The inclusion of an anti-parallel diode allows for efficient switching and reduced component count in circuits.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Motor Drives
- High-performance Power Systems
Technical Specifications
Parameter
Value
Collector-Emitter Voltage (Vce)
1300V
Collector Current (Ic) at 100°C
38A
On-state Voltage Drop (Vce(on))
Low
Short-Circuit Withstand Time
Specified
The STGWS38IH130D is a testament to STMicroelectronics' commitment to providing advanced semiconductor technologies that drive innovation across industries. By integrating this IGBT into your power electronic systems, you can achieve higher efficiency, reliability, and performance.
