EN
  • EN
  • DE

STGWA8M120DF3

Part No STGWA8M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 32 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 8A
Power - Max 167 W
Switching Energy 390µJ (on), 370µJ (Off)
Input Type Standard
Gate Charge 32 nC
Td (on/off) @ 25°C 20ns/126ns
Test Condition 600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr) 103 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA8
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277365-STGWA8M120DF3
Ultra Librarian 3D Model Ultra Librarian STGWA8M120DF3 CAD Model

Description

STGWA8M120DF3 - Silicon Carbide Power MOSFET from STMicroelectronics

The STGWA8M120DF3 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is designed to meet the efficiency and reliability demands of modern high-power applications. It is a key component for those looking to improve power density, reduce switching losses, and operate at high temperatures.

Key Features:

  • High Voltage Rating: This MOSFET is capable of handling voltages up to 1200V, making it suitable for a wide range of high-voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) as low as 80mΩ, it ensures minimal conduction losses and high efficiency in power conversion.
  • High-Speed Switching: The STGWA8M120DF3 is optimized for fast switching, reducing switching losses and enabling high-frequency operation.
  • Robust Thermal Performance: Thanks to its SiC technology, this MOSFET can operate at higher temperatures than traditional silicon MOSFETs, offering enhanced thermal performance and reliability.
  • Reduced Parasitic Inductance: The package design minimizes parasitic inductance, thus improving switching performance and reducing electromagnetic interference (EMI).

Applications:

  • Electric Vehicle (EV) inverters and chargers
  • Industrial motor drives
  • Power supplies for servers, telecom, and data centers
  • Renewable energy systems, including solar inverters and wind turbines
  • High-performance power conversion systems

The STGWA8M120DF3 is not just a component; it's a strategic choice for designers aiming to achieve unparalleled efficiency and reliability in their power systems. Its advanced SiC technology ensures that systems can handle higher power levels and operate in harsh environments without compromising performance. Whether you're developing solutions for the automotive industry, renewable energy, or industrial applications, this MOSFET from STMicroelectronics is an excellent choice for pushing the boundaries of power electronics.

With the STGWA8M120DF3, STMicroelectronics continues to lead the way in semiconductor innovation, providing the building blocks for the next generation of energy-efficient power electronics.

You May Also Be Interested in

Infineon Technologies
TO-247-3 Single IGBTs RoHS
Lowest to $6.4030
Infineon Technologies
200W 35A 1.2kV Single IGBTs RoHS
Need more? Email Us
IXYS
IGBT 900V 44A TO-247
Need more? Email Us
Infineon Technologies
TO-247-3 Single IGBTs RoHS
Lowest to $6.4030
Infineon Technologies
IKW30N65ES5 Infineon Technologies IGBTs Trenchstop 5 IGBT datasheet, inventory, & pricing.
Lowest to $3.4926
Infineon Technologies
100W 20A 1.2kV Single IGBTs RoHS
Lowest to $83.5821
IXYS
IXGA20N120A3-TRL IXYS IGBTs IXGA20N120A3 TRL datasheet, inventory, & pricing.
Need more? Email Us
Fuji Electric
649W 75A 1.2kV TO-247 Single IGBTs RoHS
Lowest to $4.9478
Infineon Technologies
270W 80A 650V TO-263-3 Single IGBTs RoHS
Lowest to $3.5362

Top Sellers

Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $9.5038
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3800
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.0101
Realtek
INTEGRATED 10/100/1000M ETHERNET TRANSCEIVER
Lowest to $2.4354
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $6.6527
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $32.0752
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $4.7519
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $18.8657
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.0677
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $4.1579
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.0677
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess