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STGWA60H65DFB

Part No STGWA60H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube / IGBT BIPO 650V 60A TO247-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 80A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2V @ 15V, 60A
Maximum Power Dissipation 375W
Total Switching Energy(Ets) 1.59mJ (on), 900μJ (off)
Input Type Standard
Gate Charge 306nC
Turn-on and Turn-off delay time 66ns/210ns
Testing Conditions 400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 Long Leads
Win Source Part Number 1103076-STGWA60H65DFB
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STGWA60H65DFB
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STGWA60H65DFB CAD Model

Description

STGWA60H65DFB - Advanced Power MOSFET by STMicroelectronics

The STGWA60H65DFB is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This particular MOSFET is part of their STPOWER product line, which is renowned for delivering exceptional power efficiency and reliability. The STGWA60H65DFB is built using advanced MDmesh™ DM6 technology that combines high voltage capability with low on-resistance and fast switching performance.

Key Features:

  • High Voltage Rating: The device is capable of handling up to 650V, making it suitable for a wide range of high voltage applications.
  • Low On-Resistance (RDS(on)): With an extremely low on-resistance, this MOSFET ensures minimal power loss and heat generation during operation, enhancing system efficiency.
  • Fast Switching Speed: The STGWA60H65DFB boasts rapid switching capabilities, which is crucial for applications requiring high switching frequencies.
  • High Current Capability: It can support a continuous drain current of 60A, enabling the device to handle high power levels with ease.
  • Enhanced Thermal Performance: The MOSFET's package is designed for optimal heat dissipation, contributing to its excellent thermal management.
  • Robust Body Diode: The device features a rugged body diode that can withstand hard commutation and high surge currents.

Applications:

The STGWA60H65DFB is versatile and can be used across various sectors including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Solar Inverters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Converters

STMicroelectronics has equipped the STGWA60H65DFB with the necessary features to ensure it meets the demands of modern high-efficiency power conversion systems. Whether you're designing for industrial, consumer, or renewable energy markets, this MOSFET is engineered to deliver top-notch performance, making it a smart choice for your power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1157 $52.9669
40+ $2.5565 $102.2600
61+ $2.4766 $151.0726
84+ $2.3967 $201.3228
108+ $2.3168 $250.2144
145+ $2.0772 $301.1940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,600 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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