STGW80H65DFB-4 - High-Efficiency IGBT from STMicroelectronics

The STGW80H65DFB-4 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of power applications. This device is a member of ST's Trench Gate Field-Stop IGBTs, which are recognized for their exceptional performance in terms of energy efficiency, switching speeds, and thermal management.

Key Features:

• Maximum Collector-Emitter Voltage: The STGW80H65DFB-4 is capable of handling a maximum collector-emitter voltage (V_CE) of 650V, making it suitable for high-voltage applications.
• High Current Rating: With a continuous collector current (I_C) rating of 80A at 25°C, this IGBT can manage significant power levels, ideal for demanding electrical environments.
• Low On-State Voltage: The device exhibits a low on-state voltage (V_CE(sat)) which minimizes conduction losses and enhances overall system efficiency.
• High Switching Speed: The fast-switching capability of the STGW80H65DFB-4 reduces switching losses and is beneficial for applications requiring high-frequency operation.
• Robust Thermal Performance: The IGBT is equipped with a maximum junction temperature of 175°C, providing a wide thermal margin for various applications.
• Co-Packaged Free-Wheeling Diode: This IGBT includes an integrated fast and soft recovery anti-parallel diode, which is optimized for minimal recovery losses during switching events.

Applications:

The STGW80H65DFB-4 is highly versatile and can be used in an array of power applications including:

• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• Welding equipment
• Induction heating systems
• Solar inverters
• Motor drives and controls

STMicroelectronics' commitment to innovation is evident in the STGW80H65DFB-4 IGBT, which offers an excellent solution for designers seeking to improve the efficiency, reliability, and thermal management of their power systems.