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STGW38IH130D

Part No STGW38IH130D
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1300V 63A 250W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1300V
Maximum Current Collector 63A
Pulsed Collector Current 125A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 20A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 3.4mJ (off)
Input Type Standard
Gate Charge 127nC
Turn-on and Turn-off delay time -/284ns
Testing Conditions 960V, 20A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 Long Leads
Win Source Part Number 212284-STGW38IH130D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGW38IH130D CAD Model

Description

STGW38IH130D - IGBT from STMicroelectronics

The STGW38IH130D is a high-performance insulated-gate bipolar transistor (IGBT) developed by STMicroelectronics, a leader in the semiconductor industry. This IGBT is designed to cater to a wide range of applications, particularly those that require fast switching and high efficiency, such as motor drives, uninterruptible power supplies (UPS), inverter welders, and solar inverters.

This device utilizes STMicroelectronics' advanced trench gate field-stop technology, which offers an optimal trade-off between conduction and switching losses. This technology enables the STGW38IH130D to achieve superior thermal performance and higher efficiency in energy conversion processes. The IGBT is capable of operating at a maximum junction temperature of 175°C, providing a significant advantage in terms of reliability and performance under extreme conditions.

The STGW38IH130D boasts a collector-emitter voltage (VCE) of 1300V and a collector current (IC) rating of 38A at 25°C. These specifications make it well-suited for high voltage and current handling applications. Additionally, the device offers a low collector-emitter saturation voltage (VCE(sat)), which reduces on-state power dissipation and enhances overall system efficiency.

One of the key features of the STGW38IH130D is its short-circuit withstand time of 10µs, providing robust protection against sudden electrical faults and enhancing the safety and longevity of the end application. Furthermore, the IGBT comes in a TO-247 long leads package, which is widely recognized for its excellent thermal properties and ease of mounting on heat sinks for effective heat dissipation.

For precise control and drive, the STGW38IH130D is equipped with a co-packaged fast recovery diode. This feature simplifies the design process by reducing the number of external components required and ensures fast and efficient switching performance.

In summary, the STGW38IH130D from STMicroelectronics is a state-of-the-art IGBT that offers a perfect balance of high efficiency, robust performance, and reliability for a variety of power applications. Its advanced technology and thoughtful design considerations make it a top choice for engineers and designers looking to enhance the performance of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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Availability: 13,964 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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